Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2−xMn1+xSi Heusler alloy films grown by molecular beam epitaxy

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Tunnel magnetoresistance effect and magnetic damping in half-metallic Heusler alloys.

Some full-Heusler alloys, such as Co(2)MnSi and Co(2)MnGe, are expected to be half-metallic ferromagnetic material, which has complete spin polarization. They are the most promising materials for realizing half-metallicity at room temperature owing to their high Curie temperature. We demonstrate a huge tunnel magnetoresistance effect in a magnetic tunnel junction using a Co(2)MnSi Heusler alloy...

متن کامل

Low-damping sub-10-nm thin films of lutetium iron garnet grown by molecular-beam epitaxy

We analyze the structural and magnetic characteristics of (111)-oriented lutetium iron garnet (Lu3Fe5O12) films grown by molecular-beam epitaxy, for films as thin as 2.8 nm. Thicknessdependent measurements of the inand out-of-plane ferromagnetic resonance allow us to quantify the effects of two-magnon scattering, along with the surface anisotropy and the saturation magnetization. We achieve eff...

متن کامل

High-mobility thin InSb films grown by molecular beam epitaxy

The problem of preparing high-mobility thin InSb films is revisited for magnetoresistive and spintronic sensor applications. We introduce a growth process that significantly improves the electrical properties of thin unintentionally doped InSb layers ~60–300 nm! epitaxially grown on GaAs~100! substrates by reducing the density of dislocations within the interfacial layer. The epilayer propertie...

متن کامل

Structural and magnetic properties of h-phase manganese nitride films grown by molecular-beam epitaxy

Face-centered tetragonal ~fct! h-phase manganese nitride films have been grown on magnesium oxide ~001! substrates by molecular-beam epitaxy. For growth conditions described here, reflection high energy electron diffraction and neutron scattering show primarily two types of domains rotated by 90° to each other with their c axes in the surface plane. Scanning tunneling microscopy images reveal s...

متن کامل

Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy

A growthwindow for theMn effusion cell temperature (TMn) is demonstrated for epitaxialMn-doped ZnO (MnZnO) thin films grown on sapphire substrates using molecular-beam epitaxy. Within the growth window, the films are ferromagnetic with the largest saturated magnetization occurring at TMn1⁄4700 1C. The Curie temperature of these MnZnO diluted magnetic semiconductor thin films is above roomtemper...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2018

ISSN: 0003-6951,1077-3118

DOI: 10.1063/1.5030341